At Nanosystems JP Inc., we offer standard semiconductor electroplating for Cu/Ni/Au/AuSn interconnects and packaging, plus specialist LIGA electroforming for high-aspect-ratio 3D metallic structures in life sciences, optics, and filtration.
Cu TSV / TGV Fill - Complete Void-Free
Complete, void-free copper filling of Through-Silicon Vias (TSV) and Through-Glass Vias (TGV) using superfill (bottom-up) additive electrolyte chemistry. Cu deposits from the via bottom upward, eliminating the voids that top-down fill produces in high-aspect-ratio geometries. Full fill is verified by cross-section SEM before CMP proceeds. Post-plating anneal at ~400°C for stress relief and grain stabilisation. For 3D-IC stacking, silicon and glass interposers, and MEMS-on-CMOS integration.
Conformal TSV / TGV Plating
Conformal (non-fill) Cu or Ni plating on TSV and TGV sidewalls, used as a diffusion barrier, RF shielding layer, or for coaxial via structures in RF MEMS and mmWave packaging. Unlike superfill plating which fills the via solid, conformal plating maintains the via opening while establishing electrical continuity on sidewalls. Applied in RF front-end modules and high-isolation millimetre-wave through-substrate interconnects.
DPC, Direct Plating Copper
DPC process enables copper deposition directly onto ceramic substrates, AlN, Al₂O₃, for power electronics packaging requiring high thermal conductivity substrate plus fine-pitch Cu circuit traces. Sputtered adhesion layer enables Cu electroplating on non-conductive ceramic surfaces. Used in SiC MOSFET and GaN transistor power modules where AlN substrate thermal conductivity (170 W/m·K) is essential for heat extraction.
Ni · Au · Ag · Pd · Rh · Ru · Pt · AuSn · In
Not every device takes the same surface finish. Au is the standard for wire-bondable and ACF-bondable pads. AuSn 80/20 eutectic is the choice for hermetic packages and laser-diode mounting where the joint must survive vacuum seal and high-temperature operation. Indium handles the cases where even AuSn is too hot - IR detector arrays, cryogenic circuits, photonic integration on temperature-sensitive compound substrates. Rh and Ru go onto MEMS switch contacts where Au would cold-weld. Pt onto sensor electrodes and implantable devices where chemical stability matters more than cost. Every stack uses a Ni diffusion barrier before any Au-family finish to prevent intermetallic growth over the device lifetime.
Electroless UBM - ENIG / ENEPIG
Wafers that cannot accept external current - active power devices, fragile thin-film structures, fully processed CMOS - still need a plated UBM to accept solder or wire bond. Electroless Ni/Au (ENIG) and Ni/Pd/Au (ENEPIG) deposit by chemical reaction alone, with no current path through the device. Ni provides the diffusion barrier; Au gives the solderable and wire-bondable surface. ENEPIG adds a Pd interlayer that improves joint reliability at elevated temperature, making it the preferred finish for SiC and GaN automotive power devices. AEC-Q compatible process flows available; thick-Ni and thick-Cu electroless variants on request.
SnAg Solder Bumping - Flip-Chip
SnAg 96.5/3.5 solder bumping for flip-chip assembly where the bonding temperature, hermetic requirement, and cost profile favour a conventional lead-free solder over AuSn. Bumps are formed electrolytically on the UBM, reflowed to sphere, and verified for coplanarity by profilometry before shipping. Pitch from 100µm, height 20–100µm, 4–12 inch wafers. Custom SnAg alloy ratios available for adjusted melt point or joint ductility - specify your reflow window and we will confirm the alloy and process conditions.
In · SnAg Combinations - Low-Temperature & Custom Alloy
Some assemblies cannot survive standard solder temperatures. Indium (In) melts at 156°C - well below the 220°C+ required by SnAg - making it the right choice when an active III-V device region, a detector material, or a cryogenic component sits immediately adjacent to the bond interface. We use In for IR focal plane array flip-chip (HgCdTe, InSb, InGaAs), quantum computing device packaging, and photonic chip co-integration where laser junctions would degrade under conventional reflow. Indium is also mechanically compliant, which matters when two dissimilar materials are being bonded and CTE mismatch would crack a stiffer solder joint. Stack options include Ni/In and Cu/Ni/In. SnAg alloy composition is available beyond 96.5/3.5 - enquire with your target melt point and we will specify the ratio.
LIGA Electroforming, Ni
Electroforming into X-ray LIGA resist molds to create high-aspect-ratio nickel microstructures with diameter as small as 1µm. The LIGA mold (deep PMMA exposed by X-ray) defines the geometry; electroformed Ni fills the mold precisely. Applications: micropore membranes with controlled pore size, microneedle arrays for drug delivery, micro-mesh filters, nebulisers for aerosol generation, and NIL molds for nanoimprinting.
LIGA Electroforming, Pd-Ni / Ni-Co
Palladium-nickel (Pd-Ni) and nickel-cobalt (Ni-Co) electroforming for enhanced hardness, wear resistance, and biocompatibility compared to pure Ni. Pd-Ni offers superior corrosion resistance and biocompatibility for life science microstructures in direct contact with biological samples. Ni-Co provides higher hardness for precision molds and mechanical components requiring long service life.