Precision
Photolithography
At Nanosystems JP Inc., we offer six exposure methods from 20 nm e-beam to 500 × 600 mm large-format glass panels, a lithography range that runs from e-beam to panel-scale steppers. Positive and negative resists, organic insulators (SU-8/PI/PBO/BCB), polymer film processing, and X-ray LIGA for 3D metallic microstructures.
feature size
(large-format stepper)
alignment accuracy
From nanoscale to panel-scale across a single program
At Nanosystems JP Inc., we offer a range of exposure methods under one project. Choose the method matched to your resolution, substrate size, and cost, or combine methods across different layers of the same device.
E-Beam Lithography
Electron beam direct-write with 20 nm minimum feature size. No photomask required, patterns written directly from GDS data. Ideal for nanophotonic gratings, metasurface lenses, custom MEMS research, and any application where mask cost for a small run is prohibitive. Available up to 8-inch wafers. Turnaround from GDS to patterned wafer without mask fabrication delay.
KrF Stepper Lithography
248 nm KrF excimer laser stepper for sub-micron features on circular wafers up to 12 inches. The highest-throughput option for production-scale MEMS, photonic waveguides, and mixed-signal devices with sub-micron features. Step-and-repeat exposure achieves 60 nm alignment accuracy across the full wafer. The workhorse for devices requiring sub-1 µm resolution at volume.
Large-Format Stepper
Step-and-repeat exposure on glass substrates up to 500 × 600 mm and 300 × 400 mm, and circular wafers up to 8 inches at 450 nm minimum feature. 4 µm minimum feature on large panels. Essential for display glass TFT patterning, biochip arrays, panel-level packaging interposers, and glass optical elements where wafer-format steppers fall short in substrate size.
Mask Aligner
Contact and proximity alignment on substrates up to 500 × 600 mm and 300 × 400 mm, and circular wafers to 12 inches. 4 µm minimum feature. Critical front-to-backside alignment capability for double-sided MEMS, aligning backside etch or metal patterns to front-side device features with sub-5 µm overlay accuracy through the wafer. Standard for pressure sensor diaphragms, through-wafer holes, and MEMS cantilevers requiring double-sided patterning.
Polymer Film Lithography
Direct patterning on flexible polymer substrates, PET, PEN, PI (Polyimide), PC (Polycarbonate), PES, COP, up to 400 × 500 mm. Line/space resolution down to 3 µm on glass and flexible substrates. Film thickness from a few micrometers up to 200 µm. Compatible with spray coating for uniform resist on flexible substrates with surface relief. Ideal for flexible printed circuits (FPC), flexible sensors, roll-to-roll device prototyping, and any device requiring patterning on a non-rigid substrate.
X-ray Lithography (LIGA)
High-energy X-ray exposure combined with electroforming and molding, the LIGA process (Lithographie, Galvanoformung, Abformung). Creates true 3D microstructures: pillars, gratings, 3D cones, and hemispheric shapes with near-vertical sidewalls and aspect ratios beyond the usual UV-LIGA window; the two routes are compared per structure height and aspect ratio. Deep PMMA resist (millimeter-scale height) exposed through an X-ray mask. The resulting mold is electroformed in Ni, Pd-Ni, or Ni-Co to produce precise metallic microparts.
Lift-Off Patterning
Bi-layer resist and LOR exposure for lift-off of Au, Pt, TiN, and AuSn metals. Our photolithography services include all resist systems and exposure methods used in lift-off patterning flows.
Complete parameter table for all six methods plus shadow-mask deposition
| Exposure Method | Min Feature | Max Substrate | Alignment | Key Capability |
|---|---|---|---|---|
| E-beam lithography | 20 nm | Up to 8 inch wafer | Sub-100 nm | Maskless direct-write from GDS; nanophotonics; metasurfaces |
| KrF stepper (248 nm) | Sub-micron | Up to 12 inch wafer | 60 nm stepping accuracy | Highest throughput sub-micron; MEMS; photonic waveguides |
| Stepper, large panel | 4 µm (panel) / 450 nm (wafer) | 500 × 600 mm glass; 300 × 400 mm; 8 inch | Step-and-repeat | Display TFT; biochip arrays; glass interposers |
| Mask aligner | 4 µm | 500 × 600 mm; 300 × 400 mm; 12 inch | Front-to-back alignment | Double-sided MEMS; through-wafer features |
| Polymer film | 3 µm/3 µm L/S | 400 × 500 mm film | ±5 µm | PET/PEN/PC; FPC; flexible sensors; spray coat capable |
| X-ray LIGA | Sub-µm sidewall | Mask-limited | X-ray mask aligned | 3D microstructures; pillars; cones; gratings; mm depth |
| Shadow mask / metal mask | Feature-dependent | Any substrate | Mechanical alignment | Resist-free patterned deposition through a physical mask; large-area deposition control |
Thin to thick, positive, negative,
and organic insulator patterning
Beyond standard photoresist, we pattern a range of organic insulators and functional polymer layers used in MEMS device layers, flexible circuit dielectrics, and advanced packaging passivation.
Positive & Negative Photoresists
Both positive-tone (exposed area removed in developer) and negative-tone (exposed area remains) resists available. Thin coatings for sub-micron lithography on standard semiconductor substrates. Thick resists (up to several hundred microns) for deep electroplating molds, LIGA processes, and structural MEMS layers. Spin coating for flat substrates; spray coating for uniform coverage on wafers with existing topography or non-flat surfaces.
SU-8 Epoxy, Structural MEMS
SU-8 is a negative-tone epoxy photoresist that cures into a permanent, mechanically robust structural layer. Used as MEMS channel walls, master molds for PDMS soft lithography, microfluidic chip channel masters, and high-aspect-ratio electroplating molds. SU-8 can be coated and patterned in multiple layers to achieve heights from 5 µm to over 500 µm. The resulting structure is chemically resistant and biocompatible, used in bioMEMS and lab-on-chip devices.
Organic Insulators: PI, PBO, BCB, Acrylic
Micron-level patterning on thick organic insulator layers used as interlayer dielectrics and passivation in RDL fabrication, fan-out packaging, and advanced MEMS. Polyimide (PI) for high-temperature and biocompatible applications; PBO (polybenzoxazole) for low-k fan-out RDL; BCB (benzocyclobutene) for lowest dielectric constant (k=2.65) in RF and mmWave applications; acrylic resin for lowest cure temperature. All are photosensitive or etch-patternable.
3D metallic microstructures with
vertical sidewalls UV cannot achieve
At Nanosystems JP Inc., we offer X-ray LIGA, creating precision 3D metallic microstructures at heights and aspect ratios beyond the usual UV photolithography window, combining X-ray exposure, electroforming, and molding in a single integrated process.
500 × 600 mm glass, beyond what wafer-format foundries can process
Most semiconductor foundries are limited to 300 mm circular wafers. Our large-format stepper and mask aligner process rectangular glass substrates up to 500 × 600 mm, enabling applications that require panel-scale substrates for cost or physical reasons.
Display Glass & TFT Backplanes
TFT gate and source/drain patterning on Eagle XG and soda lime glass for a-Si and LTPS backplanes. Large-format stepper exposure on 500 × 600 mm and 300 × 400 mm glass panels processes multiple display panels or many sensor chips in a single exposure sequence, dramatically reducing cost per chip compared to wafer-format processing.
Biochip Arrays
Biochip and microfluidic chip arrays on borosilicate and quartz glass up to 500 × 600 mm. Hundreds of chips per panel run, reducing cost per chip compared with wafer-format processing. Front-to-back alignment through the substrate (optical through glass, infrared through silicon) for chips requiring double-sided electrode patterns.
Glass Interposers & TGV
Patterning on glass interposer substrates before or after TGV (Through-Glass Via) fabrication. Large-format glass interposers for RF and optical packaging require lithography at panel scale, circuit trace patterning, electrode definition, and RDL on the same glass panel as the TGV array. Up to 510 × 510 mm panel format in the same project as TGV fabrication.
Photolithography across every
semiconductor and MEMS market
Silicon Photonics
KrF stepper for Si waveguides, ring resonators, and grating couplers. E-beam for sub-100 nm photonic crystal gratings, nanophotonic cavities, and apodized grating couplers. SOI and fused silica substrates are both supported.
MEMS Sensors & Actuators
Mask aligner for pressure sensor diaphragms, MEMS cantilevers, and inertial sensor proof masses. Front-to-back alignment for through-wafer MEMS. SU-8 thick resist for tall structural walls and electroplating molds.
Flexible Electronics (FPC)
Polymer film lithography on PET/PEN up to 400 × 500 mm for flexible printed circuits, flex sensors, and wearable electronics. Spray coating for uniform resist on pre-patterned flexible substrates with step height.
Biochip & Microfluidics
SU-8 master molds for PDMS soft-lithography. Large-format glass biochip arrays on 500 × 600 mm. Organic insulator patterning for electrode integration in biosensors and electrophoresis chips.
LIGA Microstructures
X-ray LIGA for Ni micropore membranes for drug delivery, microneedle arrays for transdermal applications, metallic mesh filters, NIL molds, and micro-nebulizers. Structures beyond the usual UV-LIGA height and aspect-ratio window.
RF & mmWave Devices
BCB (k=2.65) organic insulator patterning for RF MEMS and millimeter-wave transmission lines. KrF stepper for fine-pitch RF device features. Shadow mask for metal deposition on substrate materials incompatible with liquid resist processes.
Display & Panel Processing
Large-format stepper on 500 × 600 mm glass for TFT backplane patterning. LTPS and amorphous silicon TFT gate lithography. Multiple display panels per exposure run, minimum cost per panel.
Security & Anti-Counterfeiting
X-ray LIGA creates holograms, diffraction gratings, and nano-ID microstructures for banknotes, product authentication, and high-security tickets. Optically active structures invisible to conventional printing, verifiable only by optical inspection.
Power Semiconductor Patterning
KrF stepper for SiC MOSFET gate and implant window patterning. Thick resist for deep ion implantation mask. Mask aligner for GaN HEMT gate and field plate lithography on 4 to 8 inch compound semiconductor wafers.
Six methods, one foundry,
one project
Six exposure methods, one project
E-beam (20 nm) through 500 × 600 mm large-format panel, six distinct exposure tools operated by engineers who understand the trade-offs between resolution, throughput, substrate format, and cost. All six methods are available in one project, so a device can use e-beam on one layer and a panel stepper on another.
500 × 600 mm large-format glass
Panel-scale glass processing is not widely offered; many foundries top out at 300 mm circular wafers. Nanosystems JP Inc. offers exposure of 500 × 600 mm glass for display, biochip, and packaging applications, reducing cost per chip compared with wafer-format processing.
X-ray LIGA
X-ray LIGA is rarely offered as a foundry service. Our LIGA capability enables 3D metallic microstructures for life sciences, precision optics, security printing, and drug delivery; X-ray LIGA extends the height and aspect-ratio window beyond what UV-LIGA offers.
Organic materials expertise
SU-8, polyimide, PBO, BCB, and acrylic, thick and complex organic layer patterning requires process knowledge most MEMS foundries lack. We pattern these routinely for bioMEMS, RDL fabrication, and RF device applications.
Front-to-back alignment
Mask aligner front-to-backside alignment for double-sided MEMS structures, aligning backside features to front-side devices with sub-5 µm overlay through the full wafer thickness. Critical for through-wafer etch, pressure sensor diaphragms, and vertical MEMS actuators.
From 1 wafer, no minimum
Run a single test wafer on any exposure method to verify resist recipe, alignment mark design, or feature resolution before committing to volume. The same process flow carries into repeat production on an established baseline.
🟣 Flexible & metallic substrates: Photolithography on polyimide (PI) film and thin SUS steel is available for thin-film thermocouple and sensor fabrication, separate from the polymer film (PET/PEN/PC) lithography capability above.
Learn more →Start your project.
Initial response typically within one business day.
Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer will give an initial response typically within one business day. Full quote typically within 7-10 business days, subject to project complexity and NDA requirements.