Foundry Services : Step 1 of 11

Substrate &
Wafer
Supply

From foundational silicon to cutting-edge compound semiconductors, a complete four-tier portfolio supporting every stage of your project, from initial R&D through high-volume production.

Request a Quote Explore portfolio ↓

Silicon 2″–12″ SOI SiC GaN / GaAs / InP BK7 / Eagle X Glass Fused Silica Sapphire LiNbO₃ / LiTaO₃ 550×650mm glass

Portfolio tiers
from Si to compound

15+

Substrate materials
in stock

550×650

Max glass panel
size (mm)

2″→12″

Silicon wafer
diameter range

Substrate sourcing is step 1, we coordinate the full flow

We supply substrates as part of a complete foundry engagement. Your substrate specifications are confirmed before fabrication begins.

Tier 1, The Foundation

Silicon Wafers:
The Industry Workhorse

The most widely used substrate in semiconductor fabrication. We supply silicon wafers across the full specification range, from research-grade test wafers to prime-quality production wafers with thermal oxide or thin film coatings.

Substrate wafer comparison - 12 inch silicon, 8 inch sapphire, 6 inch GaAs, 4 inch SiC, and 2 inch wafers shown at comparative scale

Type & Orientation

P-Type (Boron), N-Type (Phosphorus, Antimony)

P-Type (B)N-Type (P)N-Type (Sb) (100)(111)

Diameters

Full size range from research to production

2 inch4 inch6 inch 8 inch12 inch

Grade

Three quality tiers for every budget and application

PrimeTestMechanical

Surface Finish

SSP (Single Side Polished) DSP (Double Side Polished) Unpolished

Resistivity

Low <0.01 Ω·cm Medium 1–10 Ω·cm High >10 Ω·cm

Flatness & Notch

StandardSemi-standardNotched

Coated Silicon Options

THERMAL OXIDE

Wet and dry thermal oxide SiO₂. High-quality gate oxide, isolation, or etch-stop layers. Available on prime wafers.

THIN FILM COATED

Thin film deposited wafers available in lots of 25, 50, and 100 wafers. Custom films on request.

EPITAXIAL SILICON

Epi silicon on heavily doped substrate. N on N+, P on P+. Custom epi specifications on request.

Tier 2, The Versatile Core

Glass & Crystalline Substrates:
High performance for a spectrum of applications

Three glass types and three crystalline materials, chosen for optical properties, thermal stability, and chemical resistance. Each serves distinct application domains from displays to UV optics.

🔵

Optical, Visible

BK7 Glass

Renowned for optical applications and exceptional mechanical stability. The standard optical glass, low absorption in the visible spectrum, excellent homogeneity, and easy to polish and coat.

High optical transmission (visible)

Excellent mechanical stability

Low bubble and inclusion content

Ideal for optical elements, lenses, windows

🟤

Display / Large Panel

Soda Lime Glass

Valued for ease of fabrication, cost-effectiveness, and versatility for broad applications. The workhorse glass for display and large-format processing, low cost, readily available in large sheets.

Cost-effective, lowest price per m²

Available in large panel formats

Easy to etch and bond

Display panels, general glass MEMS

🟢

Display / High-End

Eagle X Glass

Superior quality, clarity, and exceptional durability for specialized applications. Corning Eagle XG, the high-performance flat panel display glass with zero alkaline earth ion migration and low thermal expansion coefficient.

Superior clarity, display-grade

Low alkali content, no ion migration

Low CTE, dimensional stability

AMOLED, LTPS TFT backplanes

💠

High Temp / Optical

Quartz Wafers

High purity, thermally stable, excellent optical and electronic properties with high-temperature resilience. Crystalline quartz for piezoelectric applications and precision optical components.

Very high purity (99.99%+ SiO₂)

Thermally stable to 1050°C

Piezoelectric, used in resonators

UV-visible optical transmission

⚪

UV–IR Optical

Fused Silica

Optimal for UV to IR applications due to high transmission and low thermal expansion. The reference material for photomask substrates, deep UV lithography, and precision optical windows.

UV to IR transmission (180nm–4µm)

Ultra-low thermal expansion (CTE ≈0.55 ppm/°C)

Photomask substrates

Optical waveguides, laser optics

Full grades & specifications →

💎

High Durability

Sapphire Wafers

Extreme hardness (Mohs 9), broad transparency range, and resistance to both chemical and radiation damage. Substrate of choice for GaN epitaxy (LEDs/HEMTs) and harsh environment devices.

Mohs hardness 9, scratch resistant

Transparent 150nm–5µm (UV-IR)

GaN-on-Sapphire epi substrate

LED substrate, radiation-hard optics

Large Format Glass

Processing up to 550 × 650 mm

We empower ambitious projects by offering precise processing on glass substrates far exceeding standard wafer diameters. This enables display-panel-scale fabrication, large-format TGV interposers, and glass photomask production in one coordinated process flow.

370 × 470 mm

Standard large-format processing

Gen 2.5

550 × 650 mm

Maximum large-format capability

Gen 4

Tier 3, The High-Performers

Advanced Technical Substrates:
Engineered for demanding electronics

SOI, SiC, and piezoelectric substrates, each designed for performance requirements that standard silicon cannot meet. Used in high-frequency RF, power electronics, and precision MEMS.

🔲

RF / Advanced CMOS

SOI, Silicon on Insulator

Prominent in electronics for its ability to reduce parasitic device capacitance. The buried oxide layer electrically isolates the active device layer, enabling faster transistors and lower power consumption.

Buried oxide (BOX) layer isolates active Si

Reduced parasitic capacitance vs bulk Si

RF-SOI for 5G front-end modules

Fully-depleted SOI (FD-SOI) for low-power CMOS

MEMS-on-SOI for precision sensors

⚡

Power / High-Temp

SiC, Silicon Carbide

A powerful combination of high-temperature resistance, high thermal conductivity, and suitability for high-frequency applications. The dominant substrate for EV power devices, industrial inverters, and solar energy systems.

Bandgap 3.26 eV (4H-SiC), 3× silicon

Thermal conductivity 3× silicon

Critical field 10× silicon

SiC MOSFET, Schottky diode, JFET substrates

Available: 4H-SiC, 6H-SiC; 4″, 6″ diameters

📡

SAW / RF Filters

LiNbO₃ & LiTaO₃

Essential for SAW (Surface Acoustic Wave) filters, crucial for telecommunications. Lithium niobate and lithium tantalate are the standard substrates for mobile phone RF front-end filters at 4G/5G frequencies.

LiNbO₃ (LN), high electromechanical coupling

LiTaO₃ (LT), superior temperature stability

SAW resonators, filters, duplexers

4G/5G frequency band filters

Nonlinear optical applications

⬛

Electrochemical

Glassy Carbon

A unique combination of chemical inertness, high-temperature stability, and electrical conductivity. The material of choice for electrochemical sensors, bioelectrodes, and harsh chemical environment applications.

Chemical inertness, resists all acids/alkalis

Electrically conductive (unlike glass)

High-temperature stable to 3000°C (inert gas)

Electrochemical sensors, neural interfaces

Tier 4, The Cutting Edge

Compound & Epi-Wafers:
Next-generation semiconductor devices

III-V compound semiconductors for photonics, RF, and power, materials that silicon simply cannot replicate. Each brings electron mobility, direct bandgap, or breakdown voltage properties beyond silicon's physical limits.

🔵

High-Speed Electronics

InP, Indium Phosphide

For high-speed electronics and photonics. InP has the highest electron velocity of any commercial semiconductor, enabling transistors operating at hundreds of GHz for telecom, radar, and 6G research.

Highest electron velocity, HBT, HEMT

Direct bandgap: 1.35 eV (1550nm laser)

Telecom lasers, photodetectors, modulators

mmWave/sub-THz amplifiers

💡

LED / Laser / Photonics

GaAs, Gallium Arsenide

Ideal for LED, laser, and various photonics applications. GaAs was the first direct bandgap semiconductor to enable efficient LEDs. Today it dominates high-brightness LEDs, solar cells, and RF front ends.

Direct bandgap, efficient light emission

High electron mobility vs silicon

HBT, pHEMT, MESFET for RF

Multi-junction solar cells (>40% efficiency)

⚡

High-Power / 5G

GaN, Gallium Nitride

For high-frequency and high-power applications. GaN-on-SiC dominates 5G base station power amplifiers; GaN-on-Si enables cost-effective power transistors for EV chargers and industrial drives.

Wide bandgap 3.4 eV, high breakdown voltage

High electron saturation velocity

GaN-on-SiC (RF PA), GaN-on-Si (power)

5G mmWave, LIDAR, LED, power converter

🌞

Photodetectors / Solar

InGaAs, Indium Gallium Arsenide

For photodetectors and solar cells. InGaAs is the standard near-infrared photodetector material, tunable bandgap by varying In content allows detection from 0.8µm to 3µm, covering all telecom bands.

Tunable bandgap, NIR detection 0.8–3µm

High responsivity photodetectors

1550nm telecom receiver PIN diodes

Multi-junction solar cells, thermal imagers

Selection Guide

Material & application matrix find the right substrate instantly

Based directly on our substrate portfolio PDF. Use this matrix to quickly confirm which material suits your device's requirements. Contact us if your combination isn't shown.

Material	General Purpose	Optical (Visible)	Optical (UV/IR)	High-Frequency	High-Power	High-Temp	Photonic/Laser
Silicon
BK7 Glass
Fused Silica
Sapphire
Quartz
SOI
SiC
LiNbO₃ / LiTaO₃
GaN
GaAs
InP
InGaAs

Matrix derived from Nanosystems JP Inc. substrate portfolio. ● indicates primary application fit.

Applications

Matching substrates to
your device requirements

🧲

MEMS Sensors & Actuators

Prime silicon (100) for bulk micromachining, SOI for surface MEMS with isolation, fused silica for low-thermal-noise resonators, quartz for piezoelectric gyroscopes.

Si(100) · SOI · Fused Silica · Quartz

⚡

Power Devices (EV, Industrial)

4H-SiC for MOSFET and Schottky diodes targeting 650V–10kV. GaN-on-Si for 100–650V power transistors. GaN-on-SiC for RF power amplifiers.

4H-SiC · GaN-on-Si · GaN-on-SiC

📡

RF & 5G Devices

RF-SOI for antenna switches and tuners. GaAs pHEMT for low-noise amplifiers. InP HEMT for mmWave/THz. LiNbO₃/LiTaO₃ for SAW/BAW filters.

RF-SOI · GaAs · InP · LN/LT SAW

🔭

Photonics & Optical

Fused silica for UV to IR optical components. GaAs/InP for laser diodes and VCSELs. InGaAs for photodetectors. Sapphire for GaN LED epitaxy.

Fused Silica · GaAs/InP · InGaAs · Sapphire

🔲

Glass Interposers & TGV

Large-format glass (BK7, Soda Lime, Eagle X) up to 550×650mm for TGV interposers. Lower cost and better RF performance than silicon for 2.5D/3D packaging.

BK7 · Eagle X · Soda Lime · up to 550×650mm

🧬

Biomedical & Microfluidics

Fused silica for chemically inert microfluidic channels. Glassy carbon for electrochemical bio-sensors and neural recording electrodes. Glass for lab-on-chip diagnostics.

Fused Silica · Glassy Carbon · BK7 glass

FLEXIBLE & METALLIC SUBSTRATES

Polyimide film & thin SUS steel
sensor fabrication

Our process capabilities extend to non-wafer flexible and metallic substrates. Photolithography, PVD thin film deposition, and liftoff patterning are available on polyimide (PI) film and thin stainless steel (SUS) foil - enabling thin-film thermocouple fabrication, RTDs, flexible heaters, and precision sensor structures directly on these materials.

🟣

Polyimide Film

High-temperature polymer film for flexible sensors, heater patches, and conformal thermocouple arrays. Compatible with photolithography, PVD deposition, and liftoff.

PhotolithographyPVDLiftoffFlexible format

⬜

Thin SUS Steel

Stainless steel foil for robust high-temperature thermocouples and strain gauges. Thermally conductive, corrosion-resistant. Requires dielectric isolation layer before sensor deposition.

PhotolithographyPVDLiftoffHigh-temp operation

View full capabilities & thermocouple fabrication details →

Why Nanosystems JP Inc.

One substrate partner
for your entire project

Most substrate suppliers just ship wafers. We supply substrates as the first step in a complete fabrication project : your substrate spec is confirmed against your downstream process requirements before it's ordered.

4-tier portfolio, one supplier

From standard silicon to GaN epi-wafers, a single purchase order, a single contact, one quality system. No managing multiple substrate vendors for different materials in the same project.

Substrate + process in one quote

We confirm your substrate specification against your process flow before ordering, so the resistivity, doping, and surface quality are right for your deposition or etching steps, not just the wafer supplier's standard spec.

Large-format glass leadership

550×650mm glass substrate processing is rare in Asia. We offer this at both the standard (370×470mm) and full large-format (550×650mm) sizes, enabling panel-scale TGV and display-substrate customers to work with a Japan-based partner.

Start your project.
Response within 1 business day.

Share your process requirements, substrate, and production volume, A Nanosystems JP Inc. engineer will respond within 1 business day. Full quote typically within 7–10 business days, subject to project complexity and NDA requirements.

Full Name *

Company / Institution *

Email *

Phone / WhatsApp

Substrate Material *

Size / Format

Grade (Silicon)

Surface Finish

Project Description *

[email protected] · +81-3-5288-5569 · NDA available · All inquiries handled confidentially

Substrate &WaferSupply

Type & Orientation

Diameters

Grade

Surface Finish

Resistivity

Flatness & Notch

BK7 Glass

Soda Lime Glass

Eagle X Glass

Quartz Wafers

Fused Silica

Sapphire Wafers

Processing up to 550 × 650 mm

SOI, Silicon on Insulator

SiC, Silicon Carbide

LiNbO₃ & LiTaO₃

Glassy Carbon

InP, Indium Phosphide

GaAs, Gallium Arsenide

GaN, Gallium Nitride

InGaAs, Indium Gallium Arsenide

MEMS Sensors & Actuators

Power Devices (EV, Industrial)

RF & 5G Devices

Photonics & Optical

Glass Interposers & TGV

Biomedical & Microfluidics

Polyimide Film

Thin SUS Steel

4-tier portfolio, one supplier

Substrate + process in one quote

Large-format glass leadership

Start your project. Response within 1 business day.

Substrate &
Wafer
Supply

Start your project.
Response within 1 business day.