ALD Coating
Services
Atomic layer deposition for the layers that must be conformal: via liners, gate dielectrics, passivation, moisture barriers and diffusion barriers. Thermal and plasma-enhanced routes, from a few nanometers to a few hundred, on wafers up to 300 mm.
range, typical
high-aspect-ratio features
temperature window
formats
Where ALD earns its place
Sequential, self-limiting surface reactions give thickness control by cycle count and coverage that sputtering cannot reach inside deep features. Growth per cycle depends on the material and process and is commonly a fraction of a monolayer.
Schematic; ALD follows topography, including via sidewalls and undercuts, where the geometry has been qualified.
Via and trench liners
Al₂O₃ or SiO₂ insulation liners inside TSV and TGV, TiN or TaN barriers under the Cu seed. See TSV.
Gate dielectrics
HfO₂, Al₂O₃ and ZrO₂ for GaN HEMTs, oxide semiconductors and research transistors; interface preparation agreed per stack.
Passivation and encapsulation
ALD moisture-barrier coatings on MEMS, sensors and optical parts, with film continuity and barrier performance evaluated for the selected material, thickness and substrate; low-temperature routes for polymer and III-V surfaces.
Optical and index layers
TiO₂, Al₂O₃ and SiO₂ stacks for filters and AR coatings with cycle-accurate thickness.
Cladding and gap fill
Conformal SiO₂ coatings for etched photonic structures. Gap-fill feasibility, seams and voids are reviewed for the specified geometry and deposition route.
Metallic ALD
TiN, TaN and Ru layers as barriers, electrodes and seeds where step coverage matters.
ALD Coating Services
Scope and specification options. Every figure is confirmed for your program in the quotation.
Typical ranges
| Parameter | Typical | Note |
|---|---|---|
| Materials | Al₂O₃, HfO₂, ZrO₂, TiO₂, SiO₂, ZnO, TiN, TaN, Ru | Others on inquiry |
| Thickness | 1 to 300 nm | Thickness set by cycle count; thicker by agreement |
| Uniformity | Within-wafer thickness uniformity reported per lot | Method and sites agreed |
| Temperature | 80 to 300 °C thermal; plasma-enhanced at the low end | Selected for your thermal budget |
| Substrates | Si, glass, III-V, polymers, patterned and etched wafers; pieces to 300 mm | Wafer formats; roll-to-roll ALD is not offered |
| Conformality | High conformality in qualified high-aspect-ratio geometries | Confirmed by cross section on your feature |
For an ALD quotation
| Item | What helps |
|---|---|
| Film | Material, target thickness and tolerance, refractive index or electrical requirement |
| Substrate | Material, size, surface condition, existing films and structures with aspect ratio |
| Thermal budget | Maximum temperature the wafer can see |
| Inspection | Ellipsometry, cross section, electrical test as required |
| Quantity | Pieces or wafers and target date |
Processes usually combined with this work
Questions engineers ask before ordering
Can you coat customer-supplied substrates?
Yes, silicon, glass, III-V, polymers and patterned or etched wafers, after a review of the surface and the thermal budget.
Which thickness range?
1 to 300 nm typical, set by cycle count; thicker by agreement.
Do you offer roll-to-roll ALD?
No. ALD runs on wafer and piece formats up to 300 mm.
Dedicated pages that start from this process
Deep trenches lined with a dielectric and electrode stack as a process development program; values established on the first lot.
Start your project.
Initial response typically within one business day.
Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer gives an initial response, typically within one business day. A written quotation typically follows within 7-10 business days after we receive the required information and complete any prerequisite NDA.