Specialty Bump Services, Hi-Rel & Legacy Metallurgies

High-Pb Solder Bumps
95Pb/5Sn · 97Pb/3Sn Evaporated C4

At Nanosystems JP Inc., we fabricate high-lead solder bumps, 95Pb/5Sn and 97Pb/3Sn, by evaporation and lift-off: the original C4 flip-chip metallurgy, kept alive where decades of qualified fatigue and reliability data matter more than anything newer. For space, high-reliability, industrial, research, and legacy-system programs operating under the applicable RoHS exemptions for high-melting-temperature solders. 4 to 12 inch wafers, from a single wafer.

Intended for high-reliability, space, and legacy programs under the applicable RoHS exemptions. Exemption status and export requirements are confirmed during technical review; for Pb-free flows see our AuSn, SnAg, and gold bump services.

Have full specs ready? Submit a detailed Technical RFQ →

95Pb/5Sn · ~310 °C 97Pb/3Sn · ~320 °C Evaporated C4 heritage Lift-off patterning Low-alpha Pb on request RoHS-exemption applications From 1 wafer
~310 °C
95Pb/5Sn nominal melting -
solidus/liquidus per material spec
C4
The original evaporated
flip-chip metallurgy
4 to 12 inch
Wafer sizes supported
modern resist lift-off
1
Wafer minimum -
rebuild & last-time-buy lots
Qualification Heritage

Why high-Pb survives

Mostly displaced by plated SnAg under RoHS directives, high-lead C4 persists where its fatigue behavior and alpha-emission characteristics are already qualified into long-running space and hi-rel hardware, and re-qualifying anything else costs more than the parts. For new low-temperature designs, indium and AuSn are the modern companions on the same flow.

Indium Bump Services →
Structure Cross-Section
High-Pb C4 Bump on the Classic BLM
95Pb/5Sn C4 metallurgy · ~310°C device wafer Au Cu Cr-Cu Cr ball-limiting metallurgy (BLM) Al pad passivation Not to scale · the original evaporated C4 structure · Ti/Ni/Au available as the modern base
Why High-Pb

The original C4 bump,
still the qualified one

High-lead solder bumps were the first flip-chip interconnect, evaporated through shadow masks decades before plating took over. Three reasons keep them in production for a narrow, demanding customer base.

Decades of Qualified Data

No bump metallurgy has a longer reliability record. Thermal-fatigue models, creep behavior, electromigration limits, and failure statistics for high-Pb C4 joints were established across decades of mainframe and hi-rel production, and that body of qualification is exactly what space and hi-rel programs are certified against. Changing the metallurgy means re-qualifying the system; keeping it means sourcing the process, which is where we come in.

Longest reliability record Qualified fatigue models Certified systems keep it Process sourcing solved

High-Melt Hierarchy

Melting around 310 to 320 °C, high-Pb joints stay solid through every SnAg reflow below them, serving as the first-level interconnect in multi-step assemblies the same way they did in the original C4 architecture. The soft, compliant lead matrix also absorbs thermal-cycling strain, the fatigue behavior those decades of data describe.

~310 °C / ~320 °C nominal; solidus and liquidus per material specification Survives SnAg reflow First-level interconnect Compliant, fatigue-modeled

RoHS-Exempt & Hi-Rel Uses

High-Pb solder systems may be used in applications covered by applicable RoHS exemptions, including certain high-melting-temperature solder uses; regulatory applicability and end-use requirements should be confirmed for each program. For radiation-sensitive electronics, low-alpha lead source material is available on request to control alpha-particle soft-error rates.

≥85% Pb exemption class Aerospace & hi-rel use Low-alpha Pb on request Soft-error control
Alloys & Process

Evaporated the original way,
patterned the modern way

Historic C4 lines evaporated Pb and Sn through molybdenum shadow masks. The same physics is applied through modern lift-off resist, stacked Pb/Sn layers evaporated to composition and lifted off, with photolithographic registration the shadow masks never had.

Alloy options
95Pb/5Sn and 97Pb/3Sn, on the classic BLM or modern UBM
Composition is set by layer thickness ratio. Under the bumps: the classic evaporated Cr / Cr-Cu / Cu / Au ball-limiting metallurgy for heritage-faithful builds, or Ti/Ni/Au for modern stacks.
95/5
Pb:Sn wt% · HIGH-Pb
Nominal ~310 °C; solidus and liquidus per approved material specification
The mainstream high-Pb C4 alloy: compliant, fatigue-modeled, and solid through downstream SnAg reflow. The default for rebuild and hi-rel flip-chip work.
97/3
Pb:Sn wt% · HIGHER-Pb
Nominal ~320 °C; solidus and liquidus per approved material specification
The higher-hierarchy variant where the assembly sequence or service temperature asks for extra margin above 95/5.
BLM
Cr / Cr-Cu / Cu / Au
Classic evaporated base
The original ball-limiting metallurgy under C4 bumps, evaporated and lifted off in the same flow for heritage-faithful reproduction; Ti/Ni/Au available as the modern alternative.
Low-α
LOW-ALPHA Pb SOURCE
On request
Low-alpha-emission lead source material for radiation-sensitive and memory-adjacent electronics, quoted per program with material certification.
Stacked Pb/Sn evaporation; composition by layer ratio
Lift-off patterning with stepper registration
Classic Cr / Cr-Cu / Cu / Au BLM or Ti/Ni/Au UBM beneath
Profilometry height map and SEM standard
Legacy process reproduction with documentation support
Handled under applicable RoHS exemptions; application category confirmed at RFQ
From 1 wafer, rebuild and last-time-buy lot sizes welcome
Full Process Flow
Litho to Flip-Chip Bond
1 · Resist coat on UBM-finished wafer 2 · Expose · develop undercut profile 3 · Evaporate full stack · one vacuum 4 · Lift-off resist + field metal gone 5 · Inspect as-deposited bumps 6 · Flip-chip bond your line, or arranged →→→→→ Not to scale · stacked Pb/Sn evaporated to composition · the shadow-mask C4 flow on modern resist
Process Specifications

Complete high-Pb bump
fabrication parameters

Parameter95Pb/5Sn97Pb/3Sn
Nominal melting point (solidus and liquidus stated in the approved material specification; reflow peak and dwell set separately)~310 °C~320 °C
Wafer Sizes4 to 12 inch (100 to 300 mm)
DepositionStacked Pb/Sn evaporation; composition by layer thickness ratio
PatterningLift-off, stepper registration ±0.5 µm
Bump Height3 to 10 µm as deposited
Minimum Pitch~25 µm typical (C4-class geometries)
Base MetallurgyCr / Cr-Cu / Cu / Au classic BLM, or Ti/Ni/Au
Composition ControlLayer thickness ratio at deposition
Low-Alpha MaterialLow-alpha Pb source on request, with certification
Regulatory ScopeApplications under RoHS exemptions for solders ≥85% Pb; confirmed at RFQ
InspectionProfilometry + SEM standard; shear on request
Minimum LotFrom 1 wafer; rebuild and last-time-buy lots supported
Applications

High-Pb bumps across space,
high-reliability, and legacy systems

Space Flight Electronics

Flip-chip interconnect for satellite and launch hardware qualified around high-Pb metallurgy, where the existing thermal-fatigue and vacuum heritage is the reason the alloy is specified, and re-qualification is the cost being avoided.

Satellite · Launch · Vacuum heritage · Qualified fatigue

Avionics & Hi-Rel

High-reliability flip-chip and die attach for avionics and hi-rel programs running under long-established qualification baselines, supplied with the process documentation those programs audit.

Avionics · Hi-Rel · Audit-ready documentation · Hi-rel

Legacy C4 Rebuild & Last-Time-Buy

When an original C4 source disappears, we reproduce the evaporated high-Pb process from your specifications, single wafers to bridge lots, keeping certified systems supplied without redesign.

Source replacement · Bridge lots · Spec-faithful · No redesign

High-Temperature Hierarchy

First-level joints that must stay solid through downstream SnAg assembly, the ~310 to 320 °C melting range doing the same hierarchy job it did in the original C4 architecture.

First-level joint · Survives SnAg · Multi-step assembly

Radiation-Sensitive Assemblies

Low-alpha lead sourcing for electronics where alpha-particle soft errors matter, memory-adjacent die and instrumentation, delivered with material certification per program.

Low-alpha Pb · Soft-error control · Certified material

Legacy Process Research

Single-wafer runs reproducing qualified legacy stacks for failure analysis, reliability studies, and heritage-process research, with modern metrology on a historical metallurgy.

Failure analysis · Reliability studies · From 1 wafer
Anatomy of a C4 Column · As Deposited
Si device waferhi-rel · space · legacy programs95Pb/5Sn · evaporated layer setcomposition set by layer thicknessAl / Cu padUBM under-layerShips as deposited · bump volume set by deposited thickness97Pb/3Sn and low-alpha Pb on request · Not to scale
Companion services: UBM Deposition · Packaging & Assembly
Why Nanosystems JP Inc.

What makes our high-Pb capability
different

01

Evaporation is the standard route

High-Pb C4 is an evaporated metallurgy, and evaporation with lift-off is the discipline our whole bump family runs on. No process translation, no plating compromise.

02

Heritage-faithful, modern registration

The classic Cr / Cr-Cu / Cu / Au BLM and stacked Pb/Sn evaporation, with stepper lithography in place of shadow masks, the original physics at modern accuracy.

03

Built for small, serious lots

Rebuild programs need one to a few wafers with full documentation, not volume commitments. From 1 wafer is our standard offer, not an exception.

04

Documentation programs can audit

Process specifications and inspection data packaged for hi-rel review, the paperwork half of legacy reproduction.

05

Material sourcing handled

Standard and low-alpha lead source material quoted per program with certification, so the procurement problem arrives solved.

06

The whole ladder on one flow

High-Pb, AuSn, indium, gold, and UBM share lithography and evaporation, managed end to end by a dedicated project manager, so mixed-metallurgy programs stay in one project.

Related service

UBM Deposition: The Cr / Cr-Cu / Cu / Au and Ti/Ni/Au base metallurgies under these bumps, as a standalone service for solder you apply yourself.

UBM Deposition →

Start your project.
Initial response typically within one business day.

Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer will give an initial response typically within one business day. Full quote typically within 7-10 business days, subject to project complexity and NDA requirements.

To speed up technical review, please include:
substrate type & size  ·  target process  ·  quantity  ·  timeline  ·  design files if available (not required for first review)

sales@nanosystemsjp.co.jp · +81-3-5288-5569 · NDA available on request

Ready to discuss this process?
Initial engineering response: typically within one business day. NDA available.
Request a Quote →
Services & Industries
Capabilities Overview
Substrates
Substrate & WafersSi, SiC, GaN, glass, sapphire Fused Silica WafersQuartz · borosilicate · low CTE Glass ProcessingDrilling, etching, polishing PI Film & SUS Sensor FabRoll-to-roll · sensor patterning
Front-End
Mask FabricationGDS to chrome mask, DRC PhotolithographyE-beam 20 nm to 500 × 600 mm NanoimprintingUV & thermal NIL Thin Film DepositionPVD, CVD, ALD, MBE ALD CoatingConformal oxides, nitrides PECVD DielectricsSiO₂, SiN, SiON, a-Si TFT & BackplaneIGZO · Glass · Display Lift-OffMetal pattern · shadow mask ElectroplatingCu TSV fill, DPC, LIGA Electroforming & LIGANi shims, meshes, microstructures EtchingICP-RIE, DRIE >50:1 ICP-RIE EtchingSi, oxide, III-V, SiC, quartz MEMS FoundrySensors, actuators, microfluidics Microchannel CoolingEtched, bonded, heater test chips Thermal Test ChipsHeater dies, multi-zone, RTD Temperature SensorsPt/NiCr RTDs, thermocouples AnnealingN₂ / H₂ / vacuum / RTA Ion ImplantationB / P / As / Al / N implant CMP & GrindingCu CMP, 50 µm thinning Wafer ThinningTo 50 µm on carriers Backside MetallizationTi/Ni/Ag, Ti/Ni/Au, Ti/Cu Patterned Test WafersCustom CMP and process evaluation wafers Daisy-Chain Test DiesDummy dies, chains, bump options DicingBlade, stealth laser Stealth & Laser Dicing300 mm Si and glass, SDBG Wafer CleaningRCA, plasma, megasonic Cleaning ChemistryPiranha, SC-1, SC-2, RCA
Advanced Packaging
Wafer BondingHybrid, eutectic, fusion Anodic BondingGlass to silicon, cavities MEMS Cap WafersCavities, ports, seal lands, bonded TSV FabricationHigh AR, Cu fill InterposersSi and glass, TSV/TGV + RDL TSV RevealBackgrind → etch → CMP TGV FabricationThrough-glass via Glass TGV CouponsHole-only to routed prototypes RDL FabricationBCB / PBO / PI + damascene Packaging & AssemblyWire bond, flip-chip Flip-Chip BondingTC, reflow, AuSn, underfill 3D / 2.5D PackagingTSV + RDL + UBM + C4 AuSn BumpPVD lift-off, fluxless Laser SubmountsSi/AlN submounts, optical benches Indium BumpEvap lift-off · cryo/quantum UBM DepositionTi/Pt/Au · adhesion-barrier-Au Cu Pillar & SnAg BumpingPillars with SnAg caps, SnAg bumps Gold BumpEvap & plated · Au-Au TC AuGe / AuSi361/363 °C eutectic die attach High-Pb Bumps95Pb5Sn · hi-rel C4 SLID / TLPCu/Sn · Au/In · Ag/In Al-Ge Sealing424 °C · CMOS-friendly MEMS Ohmic ContactsGaAs · GaN · RTA + TLM SiC ProcessingContacts, implant, 1800 °C anneal GaN & III-VGaN, GaAs, InP processing Cryo / UHV MetalAuSn · Ti/Pd/Au · rings Optical AccessWindows · meshes · holes Vapor CellsDRIE + bond · unfilled TFOI WafersQuartz-on-Si · LNOI Biochip & MicrofluidicsGlass 500 × 600 mm, NIL SiPho PackagingTSV · RDL · UBM · C4 for PIC Photonic DevicesSiN/SOI waveguides, gratings
Industries
AI & HPC PackagingCoWoS-style, 2.5D / 3D Silicon PhotonicsSOI · AuSn · TSV interposer AutomotiveMEMS sensors, SiC power Life SciencesLab-on-chip, biosensors All Industries → Request a Quote →