Quantum devices

Superconducting Thin-Film and
Flip-Chip Process Modules

Niobium and tantalum films deposited and patterned on high-resistivity silicon and sapphire, dielectric stacks, through-silicon vias, wafer bonding, and indium or AuSn bump interfaces, so a resonator or qubit chip can be stacked or packaged for cryogenic test. Process development and small lots for groups that need a repeatable film, etch and packaging flow. We do not run a public quantum PDK or a millikelvin test service.

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Nb and Ta filmsHR-Si and sapphireICP-RIE patterningTSV and bondingIndium and AuSn flip-chip2 in to 300 mm
Nb, Ta
Superconducting films
deposited per program
HR-Si, sapphire
Substrates
supplied or sourced
In, AuSn
Flip-chip bump
interfaces
1
Wafer or piece
minimum order
Modules

What we run, and what we do not

Superconducting device work is a set of process modules that each need control: film purity and stress, etch profile and residue, dielectric loss, and the interconnect that survives cool-down. We quote the modules your group needs and state the limits plainly.

Device chip: Nb or Ta on HR-Si or sapphireIndium or AuSn bumpsCarrier chip with TSV and wiringAirbridge or crossover (optional)

Schematic, not to scale: a Nb or Ta device chip on HR-Si or sapphire, bumped with indium or AuSn onto a carrier that carries TSV and wiring; airbridges optional. Bump pitch, TSV size and cryogenic test are set per program.

🔬

Nb and Ta thin films

Sputtered niobium and tantalum on high-resistivity silicon and sapphire with dedicated targets procured for the program; thickness, stress and resistivity reported per lot. Other superconducting films reviewed.

⚙️

Patterning and etch

Contact, stepper or e-beam lithography as the layer needs, ICP-RIE for resonators, feedlines, ground planes and wiring, with residue-sensitive cleans. See ICP-RIE.

🧪

Dielectrics

ALD Al₂O₃ and PECVD or LPCVD SiO₂ and SiN where a crossover, capacitor or passivation is required; dielectric choice reviewed against loss.

📐

TSV and bonding

Through-silicon vias for carrier and readout wafers, and wafer bonding for stacked modules. See TSV and bonding.

🧩

Indium and AuSn flip-chip

Indium bumps for cryogenic flip-chip and AuSn for fluxless assembly, with thermocompression bonding of device to carrier. See indium bumping and flip-chip.

🔩

Not offered

Millikelvin or cryogenic electrical test, a public superconducting PDK or MPW, and Josephson junction critical-current control as a standard specification; junction work is a custom development discussion with your metrology.

At a glance

Superconducting Thin-Film and Flip-Chip Process Modules

Scope and specification options. Every figure is confirmed for your program in the quotation.

Nb, Ta
Superconducting films deposited per program
HR-Si, sapphire
Substrates supplied or sourced
In, AuSn
Flip-chip bump interfaces
1
Wafer or piece minimum order
Nb and Ta films
HR-Si and sapphire
ICP-RIE patterning
TSV and bonding
Indium and AuSn flip-chip
2 in to 300 mm
Capability

Typical ranges

Film and device figures are confirmed on your substrate; the quotation states the specification and the room-temperature measurements delivered.

ParameterTypicalNote
FilmsNb, Ta; NbN, NbTiN and Al reviewed per programTargets procured per program; stress and resistivity reported
Thickness50-300 nm typical; thicker by agreementUniformity per lot
SubstratesHigh-resistivity silicon (float-zone or HR CZ), sapphire, fused silica; 2 inch to 300 mm and piecesCleaning sequence per surface
LithographyContact for wiring and pads; stepper and e-beam for fine resonator and coupler featuresFeature size per tool set
EtchICP-RIE with fluorine or chlorine chemistries; profile and residue checked by cross sectionSidewall angle measured
InterconnectTSV, indium bumps, AuSn bumps, airbridges by lift-offPitch per layout
Room-temperature metrologyThickness, sheet resistance, film stress, optical and SEM inspectionCryogenic results are yours to measure
How a program runs

From film specification to packaged chips

Process flow
01Define02Qualify the film03Pattern04Interconnect05Deliver
  1. 01DefineFilms, substrate, layers, interconnect, what you will measure cold.
  2. 02Qualify the filmTarget procurement, deposition trials, stress and resistivity on coupons.
  3. 03PatternLithography and ICP-RIE of resonators, wiring and bumps; dielectrics where needed.
  4. 04InterconnectTSV, bonding, indium or AuSn flip-chip to the carrier.
  5. 05DeliverChips or wafers with room-temperature data for your cryogenic test.
Direct answers

Questions engineers ask before ordering

Can you fabricate Josephson junctions?

Not as a standard specification. Junction critical-current control depends on tunnel-barrier and overlay control that we treat as a custom development with your metrology; resonators, wiring, dielectrics, TSV and flip-chip are the standard modules.

Do you test at cryogenic temperature?

No. We deliver room-temperature film and dimensional data; cryogenic performance is measured by you.

What do you need to quote?

Film and thickness, substrate and size, layer stack with feature sizes, interconnect needs (TSV, bumps, bonding), quantity and date, and which cold results you need the process to support.

Related service

Quantum Technology: the process most often combined with this work, run in the same program.

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Start your project.
Initial response within one business day.

Share your process requirements, substrate, and production volume. A Nanosystems JP Inc. engineer gives an initial response, typically within one business day. A written quotation typically follows within 7-10 business days after we receive the required information and complete any prerequisite NDA.

To speed up technical review, please include:
substrate type & size  ·  target process  ·  quantity  ·  timeline  ·  design files if available (not required for first review)

sales@nanosystemsjp.co.jp · +81-3-5288-5569 · NDA available · All inquiries handled confidentially

Ready to discuss this process?
Initial engineering response typically within one business day. NDA available on request.
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All Services
Full process flow →
Substrates
Substrate & WafersSi, SiC, GaN, glass, sapphire Fused Silica WafersQuartz · borosilicate · low CTE PI Film & SUS Sensor FabRoll-to-roll · sensor patterning
Front-End
Mask FabricationGDS to chrome mask, DRC PhotolithographyE-beam 20nm to 500×600mm NanoimprintingUV & thermal NIL Thin Film DepositionPVD, CVD, ALD, MBE LiftoffMetal pattern · shadow mask ElectroplatingCu TSV fill, DPC, LIGA EtchingICP-RIE, DRIE >50:1 AnnealingN₂/H₂/vacuum/RTA Ion ImplantationB/P/As/Al/N implant CMP & GrindingCu CMP, 50µm thinning DicingBlade, stealth laser Wafer CleaningRCA, plasma, megasonic
Advanced Packaging
Wafer BondingHybrid, eutectic, fusion TSV FabricationHigh AR, void-free Cu fill TSV RevealBackgrind → etch → CMP TGV FabricationThrough-glass via RDL FabricationBCB/PBO/PI + damascene Packaging & AssemblyWire bond, flip-chip 📚 3D/2.5D PackagingTSV+RDL+UBM+C4 AuSn BumpPVD lift-off, fluxless Indium BumpEvap lift-off · cryo/quantum UBM DepositionTi/Pt/Au · adhesion-barrier-Au Gold BumpEvap & plated · Au-Au TC AuGe / AuSi356/363°C eutectic die attach High-Pb Bumps95Pb5Sn · hi-rel C4 SLID / TLPCu/Sn · Au/In · Ag/In Al-Ge Sealing424°C · CMOS-friendly MEMS Ohmic ContactsGaAs · GaN · RTA + TLM Cryo & UHV MetallizationAuSn · Ti/Pd/Au · seal rings Optical AccessWindows · meshes · thru-holes MEMS Vapor CellsDRIE + bond · unfilled bodies Thin-Film-on-InsulatorQuartz-on-Si · LNOI Biochip & MicrofluidicsGlass 500×600mm, NIL SiPho PackagingTSV·RDL·UBM·C4 for PIC
Industries
AI & HPC PackagingCoWoS-style, 2.5D/3D Silicon PhotonicsSOI · AuSn · TSV interposer Quantum TechnologyIon traps · vapor cells · TFOI AutomotiveMEMS sensors, SiC power Life SciencesLab-on-chip, biosensors All Industries → Request a Quote →
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Capabilities Overview
Substrates
Substrate & WafersSi, SiC, GaN, glass, sapphire Fused Silica WafersQuartz · borosilicate · low CTE Glass ProcessingDrilling, etching, polishing PI Film & SUS Sensor FabRoll-to-roll · sensor patterning
Front-End
Mask FabricationGDS to chrome mask, DRC PhotolithographyE-beam 20 nm to 500×600 mm NanoimprintingUV & thermal NIL Thin Film DepositionPVD, CVD, ALD, MBE ALD CoatingConformal oxides, nitrides PECVD DielectricsSiO₂, SiN, SiON, a-Si TFT & BackplaneIGZO · Glass · Display LiftoffMetal pattern · shadow mask ElectroplatingCu TSV fill, DPC, LIGA Electroforming & LIGANi shims, meshes, microstructures EtchingICP-RIE, DRIE >50:1 ICP-RIE EtchingSi, oxide, III-V, SiC, quartz MEMS FoundrySensors, actuators, microfluidics Microchannel CoolingEtched, bonded, heater test chips Thermal Test ChipsHeater dies, multi-zone, RTD Temperature SensorsPt/NiCr RTDs, thermocouples AnnealingN₂ / H₂ / vacuum / RTA Ion ImplantationB / P / As / Al / N implant CMP & GrindingCu CMP, 50 µm thinning Wafer ThinningTo 50 µm on carriers Patterned Test WafersCustom CMP and process evaluation wafers Daisy-Chain Test DiesDummy dies, chains, bump options DicingBlade, stealth laser Stealth & Laser Dicing300 mm Si and glass, SDBG Wafer CleaningRCA, plasma, megasonic Cleaning ChemistryPiranha, SC-1, SC-2, RCA
Advanced Packaging
Wafer BondingHybrid, eutectic, fusion Anodic BondingGlass to silicon, cavities MEMS Cap WafersCavities, ports, seal lands, bonded TSV FabricationHigh AR, void-free Cu fill InterposersSi and glass, TSV/TGV + RDL TSV RevealBackgrind → etch → CMP TGV FabricationThrough-glass via Glass TGV CouponsHole-only to routed prototypes RDL FabricationBCB / PBO / PI + damascene Packaging & AssemblyWire bond, flip-chip Flip-Chip BondingTC, reflow, AuSn, underfill 3D / 2.5D PackagingTSV + RDL + UBM + C4 AuSn BumpPVD lift-off, fluxless Laser SubmountsSi/AlN submounts, optical benches Indium BumpEvap lift-off · cryo/quantum UBM DepositionTi/Pt/Au · adhesion-barrier-Au Cu Pillar & SnAg BumpingPillars with SnAg caps, SnAg bumps Gold BumpEvap & plated · Au-Au TC AuGe / AuSi356/363°C eutectic die attach High-Pb Bumps95Pb5Sn · hi-rel C4 SLID / TLPCu/Sn · Au/In · Ag/In Al-Ge Sealing424°C · CMOS-friendly MEMS Ohmic ContactsGaAs · GaN · RTA + TLM SiC ProcessingContacts, implant, 1800 °C anneal GaN & III-VGaN, GaAs, InP processing Cryo / UHV MetalAuSn · Ti/Pd/Au · rings Optical AccessWindows · meshes · holes Vapor CellsDRIE + bond · unfilled TFOI WafersQuartz-on-Si · LNOI Biochip & MicrofluidicsGlass 500×600 mm, NIL SiPho PackagingTSV · RDL · UBM · C4 for PIC Photonic DevicesSiN/SOI waveguides, gratings
Industries
AI & HPC PackagingCoWoS-style, 2.5D / 3D Silicon PhotonicsSOI · AuSn · TSV interposer AutomotiveMEMS sensors, SiC power Life SciencesLab-on-chip, biosensors All Industries → Request a Quote →